Part Number : |
RN1964TE85LF |
Manufacturer/Brand : |
Toshiba Semiconductor and Storage |
Description : |
TRANS 2NPN PREBIAS 0.2W US6 |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
409099 pcs |
Datasheets |
RN1964TE85LF.pdf |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Transistor Type |
2 NPN - Pre-Biased (Dual) |
Supplier Device Package |
US6 |
Series |
- |
Resistor - Emitter Base (R2) |
47 kOhms |
Resistor - Base (R1) |
47 kOhms |
Power - Max |
200mW |
Packaging |
Cut Tape (CT) |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Other Names |
RN1964TE85LFCT |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Frequency - Transition |
250MHz |
Detailed Description |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA, 5V |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Current - Collector (Ic) (Max) |
100mA |