Part Number : | RN1966FE(TE85L,F) |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | TRANS 2NPN PREBIAS 0.1W ES6 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 548836 pcs |
Datasheets | RN1966FE(TE85L,F).pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | ES6 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 100mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 |
Other Names | RN1966FE(TE85LF)TR RN1966FETE85LF |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |