| Part Number : |
SCT2H12NYTB |
| Manufacturer/Brand : |
LAPIS Semiconductor |
| Description : |
1700V 1.2 OHM 4A SIC FET |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
7947 pcs |
| Datasheets |
1.SCT2H12NYTB.pdf2.SCT2H12NYTB.pdf |
| Vgs(th) (Max) @ Id |
4V @ 410µA |
| Vgs (Max) |
+22V, -6V |
| Technology |
SiCFET (Silicon Carbide) |
| Supplier Device Package |
TO-268 |
| Series |
- |
| Rds On (Max) @ Id, Vgs |
1.5 Ohm @ 1.1A, 18V |
| Power Dissipation (Max) |
44W (Tc) |
| Packaging |
Cut Tape (CT) |
| Package / Case |
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Other Names |
SCT2H12NYTBCT |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
184pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 18V |
| FET Type |
N-Channel |
| FET Feature |
- |
| Drive Voltage (Max Rds On, Min Rds On) |
18V |
| Drain to Source Voltage (Vdss) |
1700V |
| Detailed Description |
N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268 |
| Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
LAPIS Semiconductor
