Part Number : | SCT3022ALGC11 |
---|---|
Manufacturer/Brand : | LAPIS Semiconductor |
Description : | MOSFET NCH 650V 93A TO247N |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 900 pcs |
Datasheets | 1.SCT3022ALGC11.pdf2.SCT3022ALGC11.pdf |
Vgs(th) (Max) @ Id | 5.6V @ 18.2mA |
Vgs (Max) | +22V, -4V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247N |
Series | - |
Rds On (Max) @ Id, Vgs | 28.6 mOhm @ 36A, 18V |
Power Dissipation (Max) | 339W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2208pF @ 500V |
Gate Charge (Qg) (Max) @ Vgs | 133nC @ 18V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N |
Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |