| Part Number : | SI3585CDV-T1-GE3 |
|---|---|
| Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
| Description : | MOSFET N/P-CH 20V 3.9A 6TSOP |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 149144 pcs |
| Datasheets | SI3585CDV-T1-GE3.pdf |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 2.5A, 4.5V |
| Power - Max | 1.4W, 1.3W |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3585CDV-T1-GE3-ND SI3585CDV-T1-GE3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 32 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 10V |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 3.9A, 2.1A |
