Part Number : | SI3586DV-T1-GE3 |
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Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET N/P-CH 20V 2.9A 6-TSOP |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4894 pcs |
Datasheets | SI3586DV-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Supplier Device Package | 6-TSOP |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.4A, 4.5V |
Power - Max | 830mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Other Names | SI3586DV-T1-GE3TR SI3586DVT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | Mosfet Array N and P-Channel 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
Base Part Number | SI3586 |