Part Number : | TP65H035WS |
---|---|
Manufacturer/Brand : | Transphorm |
Description : | 650 V 46.5 CASCODE GAN FET |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 2033 pcs |
Datasheets | TP65H035WS.pdf |
Vgs(th) (Max) @ Id | 4.8V @ 700µA |
Vgs (Max) | ±20V |
Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | TO-247-3 |
Series | - |
Rds On (Max) @ Id, Vgs | 41 mOhm @ 30A, 8V |
Power Dissipation (Max) | 156W (Tc) |
Package / Case | TO-247-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Manufacturer Standard Lead Time | 15 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 8V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 8V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25°C | 46.5A (Tc) |