| Part Number : | TP65H050WS |
|---|---|
| Manufacturer/Brand : | Transphorm |
| Description : | 650 V 34 A CASCODE GAN FET |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 2420 pcs |
| Datasheets | TP65H050WS.pdf |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | TO-247-3 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 22A, 10V |
| Power Dissipation (Max) | 119W (Tc) |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Manufacturer Standard Lead Time | 15 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Transphorm
