| Part Number : | TRS10E65C,S1Q |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | DIODE SCHOTTKY 650V 10A TO220-2L |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 4746 pcs |
| Datasheets | TRS10E65C,S1Q.pdf |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Supplier Device Package | TO-220-2L |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Reverse Recovery Time (trr) | 0ns |
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Other Names | TRS10E65C,S1Q(S TRS10E65C,S1Q-ND TRS10E65CS1Q |
| Operating Temperature - Junction | 175°C (Max) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Diode Type | Silicon Carbide Schottky |
| Detailed Description | Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220-2L |
| Current - Reverse Leakage @ Vr | 90µA @ 650V |
| Current - Average Rectified (Io) | 10A (DC) |
| Capacitance @ Vr, F | - |
Toshiba Semiconductor and Storage
