Part Number : | TRS12E65C,S1Q |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | DIODE SCHOTTKY 650V 12A TO220-2L |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 2611 pcs |
Datasheets | TRS12E65C,S1Q.pdf |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 12A |
Voltage - DC Reverse (Vr) (Max) | 650V |
Supplier Device Package | TO-220-2L |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Reverse Recovery Time (trr) | 0ns |
Packaging | Tube |
Package / Case | TO-220-2 |
Other Names | TRS12E65C,S1Q(S TRS12E65CS1Q |
Operating Temperature - Junction | 175°C (Max) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Diode Type | Silicon Carbide Schottky |
Detailed Description | Diode Silicon Carbide Schottky 650V 12A (DC) Through Hole TO-220-2L |
Current - Reverse Leakage @ Vr | 90µA @ 170V |
Current - Average Rectified (Io) | 12A (DC) |
Capacitance @ Vr, F | 65pF @ 650V, 1MHz |