Part Number : | 1N8026-GA |
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Manufacturer/Brand : | GeneSiC Semiconductor |
Description : | DIODE SILICON 1.2KV 8A TO257 |
RoHs Status : | Contains lead / RoHS non-compliant |
Quantity Available | 196 pcs |
Datasheets | 1N8026-GA.pdf |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2.5A |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Supplier Device Package | TO-257 |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Reverse Recovery Time (trr) | 0ns |
Packaging | Tube |
Package / Case | TO-257-3 |
Other Names | 1242-1113 1N8026GA |
Operating Temperature - Junction | -55°C ~ 250°C |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 18 Weeks |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Diode Type | Silicon Carbide Schottky |
Detailed Description | Diode Silicon Carbide Schottky 1200V 8A (DC) Through Hole TO-257 |
Current - Reverse Leakage @ Vr | 10µA @ 1200V |
Current - Average Rectified (Io) | 8A (DC) |
Capacitance @ Vr, F | 237pF @ 1V, 1MHz |
Base Part Number | 1N8026 |