| Part Number : | 1N8035-GA |
|---|---|
| Manufacturer/Brand : | GeneSiC Semiconductor |
| Description : | DIODE SCHOTTKY 650V 14.6A TO276 |
| RoHs Status : | Contains lead / RoHS non-compliant |
| Quantity Available | 165 pcs |
| Datasheets | 1N8035-GA.pdf |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 15A |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Supplier Device Package | TO-276 |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Reverse Recovery Time (trr) | 0ns |
| Packaging | Tube |
| Package / Case | TO-276AA |
| Other Names | 1242-1122 1N8035GA |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 18 Weeks |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Diode Type | Silicon Carbide Schottky |
| Detailed Description | Diode Silicon Carbide Schottky 650V 14.6A (DC) Surface Mount TO-276 |
| Current - Reverse Leakage @ Vr | 5µA @ 650V |
| Current - Average Rectified (Io) | 14.6A (DC) |
| Capacitance @ Vr, F | 1107pF @ 1V, 1MHz |
| Base Part Number | 1N8035 |
GeneSiC Semiconductor
