| Part Number : | 1N8033-GA |
|---|---|
| Manufacturer/Brand : | GeneSiC Semiconductor |
| Description : | DIODE SCHOTTKY 650V 4.3A TO276 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 175 pcs |
| Datasheets | 1N8033-GA.pdf |
| Voltage - Peak Reverse (Max) | Silicon Carbide Schottky |
| Voltage - Forward (Vf) (Max) @ If | 4.3A (DC) |
| Voltage - Breakdown | TO-276 |
| Series | - |
| RoHS Status | Tube |
| Reverse Recovery Time (trr) | No Recovery Time > 500mA (Io) |
| Resistance @ If, F | 274pF @ 1V, 1MHz |
| Polarization | TO-276AA |
| Other Names | 1242-1120 1N8033GA |
| Operating Temperature - Junction | 0ns |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 18 Weeks |
| Manufacturer Part Number | 1N8033-GA |
| Expanded Description | Diode Silicon Carbide Schottky 650V 4.3A (DC) Surface Mount TO-276 |
| Diode Configuration | 5µA @ 650V |
| Description | DIODE SCHOTTKY 650V 4.3A TO276 |
| Current - Reverse Leakage @ Vr | 1.65V @ 5A |
| Current - Average Rectified (Io) (per Diode) | 650V |
| Capacitance @ Vr, F | -55°C ~ 250°C |
GeneSiC Semiconductor
