| Part Number : | 1N8030-GA |
|---|---|
| Manufacturer/Brand : | GeneSiC Semiconductor |
| Description : | DIODE SCHOTTKY 650V 750MA TO257 |
| RoHs Status : | Contains lead / RoHS non-compliant |
| Quantity Available | 205 pcs |
| Datasheets | 1N8030-GA.pdf |
| Voltage - Forward (Vf) (Max) @ If | 1.39V @ 750mA |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Supplier Device Package | TO-257 |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Reverse Recovery Time (trr) | 0ns |
| Packaging | Tube |
| Package / Case | TO-257-3 |
| Other Names | 1242-1117 1N8030GA |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 18 Weeks |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Diode Type | Silicon Carbide Schottky |
| Detailed Description | Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-257 |
| Current - Reverse Leakage @ Vr | 5µA @ 650V |
| Current - Average Rectified (Io) | 750mA |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Base Part Number | 1N8030 |
GeneSiC Semiconductor
