| Part Number : | EPC2105ENG |
|---|---|
| Manufacturer/Brand : | EPC |
| Description : | TRANS GAN 2N-CH 80V BUMPED DIE |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 3927 pcs |
| Datasheets | EPC2105ENG.pdf |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 20A, 5V |
| Power - Max | - |
| Packaging | Bulk |
| Package / Case | Die |
| Other Names | EPC2105ENGR 917-EPC2105ENG EPC2105ENGR EPC2105ENGRH4 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 80V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
EPC
