Part Number : | EPC2110 |
---|---|
Manufacturer/Brand : | EPC |
Description : | MOSFET 2NCH 120V 3.4A DIE |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 28253 pcs |
Datasheets | EPC2110.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 700µA |
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
Power - Max | - |
Packaging | Cut Tape (CT) |
Package / Case | Die |
Other Names | 917-1152-1 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 14 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 120V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Die |
Current - Continuous Drain (Id) @ 25°C | 3.4A |