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EPC2110

Part Number : EPC2110
Manufacturer/Brand : EPC
Description : MOSFET 2NCH 120V 3.4A DIE
RoHs Status : Lead free / RoHS Compliant
Quantity Available 28253 pcs
Datasheets EPC2110.pdf
Vgs(th) (Max) @ Id 2.5V @ 700µA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 5V
Power - Max -
Packaging Cut Tape (CT)
Package / Case Die
Other Names 917-1152-1
Operating Temperature -40°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
FET Type 2 N-Channel (Dual) Common Drain
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 120V
Detailed Description Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Die
Current - Continuous Drain (Id) @ 25°C 3.4A
EPC2110
EPC EPC Images are for reference only.See Product Specifications for product details.
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