| Part Number : | EPC2110ENGRT |
|---|---|
| Manufacturer/Brand : | EPC |
| Description : | TRANS GAN 2N-CH 120V BUMPED DIE |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 30760 pcs |
| Datasheets | EPC2110ENGRT.pdf |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
| Power - Max | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Other Names | 917-EPC2110ENGRTR EPC2110ENGR |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 16 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 120V |
| Detailed Description | Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
EPC
