Part Number : |
EPC2107ENGRT |
Manufacturer/Brand : |
EPC |
Description : |
TRANS GAN 3N-CH 100V BUMPED DIE |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
33224 pcs |
Datasheets |
EPC2107ENGRT.pdf |
Vgs(th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Supplier Device Package |
9-BGA (1.35x1.35) |
Series |
eGaN® |
Rds On (Max) @ Id, Vgs |
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Power - Max |
- |
Packaging |
Tape & Reel (TR) |
Package / Case |
9-VFBGA |
Other Names |
917-EPC2107ENGRTR |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
16pF @ 50V, 7pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
0.16nC @ 5V, 0.044nC @ 5V |
FET Type |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
100V |
Detailed Description |
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
Current - Continuous Drain (Id) @ 25°C |
1.7A, 500mA |